ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：55mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The SQ4946EY-T1-E3 is a dual N-channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a continuous drain current of 4.5 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.055 Ω at VGS = 10 V. It operates within a junction and storage temperature range of -55 °C to +175 °C. Packaged in an SO-8 surface-mount footprint, the component has passed AEC-Q101 reliability testing for automotive applications.
Feature Summary
- TrenchFET power MOSFET architecture providing low thermal resistance
- AEC-Q101 qualified with passed reliability testing
- Dual N-channel configuration in a compact SO-8 package
Applications
- Automotive electronics systems
- Industrial equipment control circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging format. Confirm that the SO-8 package dimensions match the target PCB layout requirements. Ensure the selected variant meets the required AEC-Q101 qualification standards if deployed in automotive environments. Validate all electrical parameters against the latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel configuration is required for 60 V applications. The 4.5 A continuous current rating suits moderate power switching tasks. Consider the 0.055 Ω maximum RDS(on) for efficiency calculations. The wide operating temperature range supports harsh environment deployment. Verify gate charge requirements align with the driving circuit capabilities.
Part Context
This part belongs to the SQ series of dual MOSFETs manufactured by Vishay Siliconix. The series utilizes advanced TrenchFET technology to achieve low on-resistance and high switching speeds. The SO-8 package provides a balance between thermal performance and space efficiency for surface-mount assembly.
Replacement Considerations
SQ4946EY-T1
FAQ
What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current is 4.5 A at a case temperature of 25 °C.
Is the device suitable for automotive applications?
Yes, the device has passed all AEC-Q101 reliability testing.
What is the maximum junction temperature?
The maximum operating junction temperature is +175 °C.
