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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 7.5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Tc)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1020pF @ 25V
- Power - Max：3.3W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4949EY-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports continuous drain currents of -7.5 A per leg at 25 °C. The device offers low on-state resistance, typically 0.035 Ω at VGS = -10 V and 0.065 Ω at VGS = -4.5 V. Packaged in an SO-8 footprint, it is qualified to AEC-Q101 standards and rated for junction temperatures up to +175 °C.
Feature Summary
- Dual P-channel configuration with independent gate control
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture for optimized performance
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Automotive load switching applications
- High-side power distribution circuits
- Motor control interfaces requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the procurement source provides valid traceability for AEC-Q101 qualification. Confirm thermal management requirements align with the specified junction-to-ambient ratings during system integration.
Selection Notes
Select this component when designing high-side switches for automotive systems requiring dual channel isolation. Evaluate the gate drive voltage levels against the specified RDS(on) thresholds at -4.5 V and -10 V. Consider the thermal dissipation capabilities relative to the PCB mounting conditions defined in the datasheet.
Part Context
This part belongs to the SQ4949EY series of automotive dual P-channel MOSFETs. It shares the same core die and electrical characteristics as the SQ4949EY, with the suffix indicating specific tape-and-reel packaging and halogen-free material compliance.
Replacement Considerations
Direct replacements must match the -30 V rating, dual P-channel configuration, and SO-8 package. Verify that any substitute also holds AEC-Q101 qualification if used in automotive contexts.
