SQ9945BEY-T1_GE3

$1.39

Description：MOSFET 2N-CH 60V 5.4A 8SOIC
Series：TrenchFET®

SKU:a449f1239f7d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 5.4A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：5.4A
Rds On (Max) @ Id, Vgs：64mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：470pF @ 25V
Power - Max：4W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SQ9945BEY-T1_GE3

Overview

The Vishay Siliconix SQ9945BEY-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports junction temperatures up to 175 °C. The device provides a continuous drain current of 5.4 A at 25 °C case temperature, with a maximum on-state resistance of 0.082 Ω at VGS = 4.5 V. Packaged in an SO-8 surface-mount configuration, it includes 100% gate resistance and unclamped inductive switching (UIS) testing.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and unclamped inductive switching

Applications

Automotive electronic control units
Low-side load switching applications
Power distribution modules

Procurement Notes

Verify the complete ordering suffix against official documentation to ensure correct packaging and material compliance. Confirm that the specific revision matches project requirements before finalizing procurement orders.

Selection Notes

Evaluate thermal management capabilities based on the specified junction-to-ambient resistance when designing PCB layouts. Ensure gate drive voltages remain within the absolute maximum ratings to maintain optimal switching characteristics and prevent device degradation.

Part Context

This component belongs to the Vishay Siliconix SQ9945B series of automotive dual N-channel MOSFETs. It is designed specifically for high-reliability applications requiring robust switching performance under demanding thermal conditions.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters carefully to ensure compatibility without modifying existing circuit designs.