SQJ740EP-T1_GE3

Overview

The Vishay Siliconix SQJ740EP-T1_GE3 is an automotive-grade dual N-channel enhancement mode MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides a maximum on-state resistance (RDS(on)) of 3.4 mΩ at VGS = 10 V, with a typical value of 2.8 mΩ. Each channel supports a continuous drain current of 123 A at TC = 25 °C and a pulsed drain current of 399 A. Packaged in a PowerPAK SO-8L Dual BWL surface-mount footprint, it includes an integrated body diode with a forward voltage of 1.2 V max at IF = 7 A.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET Gen IV structure for optimized low on-resistance
• Dual configuration with independent gate and source terminals

Applications

• Automotive power distribution systems
• High-current DC-DC converter stages
• Motor control applications requiring bidirectional switching

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and lead-free status. Ensure compliance with RoHS directives by checking material categorization reports. Confirm that the component meets AEC-Q101 requirements for your specific automotive application environment before finalizing procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for 40 V automotive circuits. Evaluate thermal performance based on the specified RthJC of 1.6 °C/W and ensure PCB layout supports the PowerPAK SO-8L footprint. Consider the total gate charge of 56 nTyp for driver compatibility in high-frequency switching applications.

Part Context

This part belongs to the SQJ series of Vishay Siliconix TrenchFET MOSFETs designed for automotive environments. It shares the PowerPAK SO-8L Dual BWL package form factor with other dual-channel variants in the lineup, offering a space-efficient alternative to discrete single-channel packages for balanced load applications.

Replacement Considerations

Direct replacements must match the 40 V rating, dual N-channel configuration, and PowerPAK SO-8L Dual BWL package. Verify that any substitute maintains equivalent RDS(on) limits and AEC-Q101 qualification if automotive reliability is required.

FAQ

What is the maximum pulsed drain current for the SQJ740EP?

The maximum pulsed drain current (IDM) is 399 A, measured under pulse test conditions with a width of ≤ 300 μs and duty cycle ≤ 2%.

Is the SQJ740EP suitable for harsh automotive environments?

Yes, the device is AEC-Q101 qualified and rated for an operating junction temperature range from -55 °C to +175 °C.

What is the reverse recovery time of the internal body diode?

The body diode reverse recovery time (trr) is typically 346 ns when tested at IF = 7 A and di/dt = 100 A/μs.