SQJ748EP-T1_GE3

Overview

The SQJ748EP is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology and qualified to AEC-Q101 standards. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides a continuous drain current of 72 A per leg at 25 °C case temperature, with a maximum on-state resistance (RDS(on)) of 6.88 mΩ at VGS = 10 V. Packaged in a PowerPAK SO-8L Dual BWL footprint, it offers a thermal resistance (junction-to-case) of 2.3 °C/W and supports single-pulse avalanche energy up to 15 mJ.

Feature Summary

• AEC-Q101 qualified for automotive reliability requirements
• TrenchFET power MOSFET architecture for optimized performance
• 100% tested for both RDS(on) and Unclamped Inductive Switching (UIS)
• Exposed copper terminal design for enhanced thermal dissipation

Applications

• Automotive power distribution systems
• High-current motor control circuits
• Low-side switching applications in vehicle electronics

Procurement Notes

Verify the complete ordering suffix via the official Vishay document 79771 to ensure correct packaging configuration. Confirm that the exposed copper tip solder fillet requirement aligns with your assembly process specifications. Validate component authenticity through authorized distributors to maintain AEC-Q101 compliance.

Selection Notes

Select this component when a dual N-channel configuration with high current capability is required in a compact surface-mount package. Ensure the PCB layout accommodates the specific thermal characteristics of the PowerPAK SO-8L Dual BWL package. Verify that the gate drive voltage meets the 10 V threshold for optimal RDS(on) performance.

Part Context

This part belongs to the SQJ series of automotive MOSFETs designed by Vishay Siliconix. It shares the TrenchFET technology platform with other devices in the lineup but is distinguished by its specific 40 V rating and dual-channel topology within the PowerPAK SO-8L Dual BWL package.

Replacement Considerations

Direct substitutes must match the 40 V rating, dual N-channel configuration, and PowerPAK SO-8L Dual BWL package. Verify equivalent RDS(on), thermal resistance, and AEC-Q101 qualification status before implementation.

FAQ

What is the maximum single-pulse avalanche energy supported by the SQJ748EP?

The device supports a single-pulse avalanche energy (EAS) of 15 mJ when tested with an inductance of 0.1 mH.

How does the junction temperature affect the on-state resistance?

The RDS(on) increases with temperature; it reaches a maximum of 10.5 mΩ at 125 °C and 12.6 mΩ at 175 °C under standard test conditions.

Is the body diode reverse recovery time specified?

Yes, the typical reverse recovery time (trr) is 204 ns when conducting 10 A with a di/dt of 100 A/μs.