SQJ912AEP-T1_GE3

$1.05

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:905d01974137 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A
Rds On (Max) @ Id, Vgs：9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1835pF @ 20V
Power - Max：48W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ912AEP-T1_GE3

Overview

The Vishay Siliconix SQJ912AEP-T1_GE3 is an automotive-grade dual N-channel MOSFET featuring TrenchFET technology. It provides a drain-source voltage (VDS) of 40 V and supports a continuous drain current (ID) of 30 A per leg at 25 °C. The device exhibits low on-state resistance, with typical values of 7.7 mΩ at VGS = 10 V and 9.3 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C and meets AEC-Q101 qualification standards.

Feature Summary

Dual N-channel configuration utilizing TrenchFET power MOSFET technology for optimized performance.
Qualified for automotive applications under the AEC-Q101 standard.
Includes comprehensive testing for gate resistance (Rg) and unclamped inductive switching (UIS).
Leadless PowerPAK SO-8L package design facilitates efficient thermal dissipation.

Applications

Automotive power distribution systems
High-side and low-side load switch circuits
DC motor control applications

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official Vishay documentation. Confirm that the specific ordering suffix matches the required package and compliance specifications. Ensure all technical parameters align with the target application requirements before finalizing procurement decisions.

Selection Notes

Select this component when a compact dual N-channel solution is required for 40 V automotive environments. Evaluate the thermal resistance characteristics against the system's heat dissipation capabilities. Consider the low on-resistance values for minimizing conduction losses in high-current switching scenarios.

Part Context

This component belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The PowerPAK SO-8L package offers a small footprint suitable for space-constrained PCB layouts while maintaining robust thermal performance.