SQJ914EP-T1_GE3

Overview

The Vishay Siliconix SQJ914EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and supports a continuous drain current of 30 A at 25 °C case temperature. The device offers a typical on-state resistance of 9.8 mΩ at VGS = 10 V and 170 mΩ at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L package.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET architecture for optimized performance
• 100% Rg and UIS tested for enhanced quality assurance

Applications

• Automotive electronic systems requiring high reliability
• Low-side switching applications in vehicle power distribution
• General purpose power switching circuits operating up to 175 °C

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets the required automotive qualification standards for the intended application environment. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement specifications.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case and junction-to-ambient thermal resistances. Confirm that gate drive voltages align with the threshold and on-resistance characteristics provided in the static specifications. Validate PCB layout dimensions against the recommended minimum pad pattern for the PowerPAK SO-8L package.

Part Context

This component belongs to the SQJ series of automotive MOSFETs from Vishay Siliconix. It is designed for high-current, low-voltage switching applications where compact footprint and robust thermal performance are critical. The dual configuration allows for efficient implementation of bridge or half-bridge topologies.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same product family. Verify pinout compatibility and electrical parameter equivalence before considering any cross-references.

FAQ

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is rated at 90 A.

Is the body diode reverse recovery time specified?

Yes, the body diode reverse recovery time (trr) is typically 225 ns under test conditions of IF = 3 A and di/dt = 100 A/μs.

What is the total gate charge value?

The total gate charge (Qg) is typically 15 nC when tested at VGS = 10 V, VDS = 15 V, and ID = 5 A.