SQJ956EP-T1_GE3

$1.39

Description：MOSFET 2N-CH 60V 23A PPAK SO8
Series：TrenchFET®

SKU:b1623703172f Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 23A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Rds On (Max) @ Id, Vgs：26.7mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1395pF @ 30V
Power - Max：34W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ956EP-T1_GE3

Overview

The SQJ956EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 23 A per leg at 25 °C. The device offers a low on-state resistance of 0.0223 Ω at VGS = 10 V and 0.0242 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L footprint, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability requirements
TrenchFET power MOSFET architecture for optimized performance
Dual configuration with independent channel control

Applications

Automotive power distribution systems
High-side and low-side load switching applications
DC motor control circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets the required thermal management specifications for the intended PCB layout. Confirm that the application environment remains within the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact surface-mount footprint. Evaluate the thermal resistance characteristics against the expected power dissipation in the target circuit. Consider the gate charge parameters for driving efficiency in high-frequency switching applications.

Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It is designed to provide robust performance in demanding environments while maintaining a small physical profile suitable for modern electronic assemblies.

Replacement Considerations

Consult the official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without cross-referencing pin configurations and thermal characteristics.