SQJB02ELP-T1_GE3

$1.39

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：-

SKU:9c9691b0587e Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：7.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 20V
Power - Max：27W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJB02ELP-T1_GE3

Overview

The Vishay Siliconix SQJB02ELP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports junction temperatures up to 175 °C. The device provides a continuous drain current of 30 A per leg with a maximum on-state resistance of 7.5 mΩ at VGS = 10 V. Packaged in a leadless PowerPAK SO-8L, it meets AEC-Q101 standards and undergoes 100% Rg and UIS testing.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK SO-8L package design for efficient thermal dissipation

Applications

Automotive electronic control units (ECUs)
High-side and low-side switching applications
Power distribution modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. Ensure that component authenticity is validated through authorized channels. Confirm RoHS compliance status and material categorization details prior to integration into production workflows.

Selection Notes

Evaluate the 7.5 mΩ maximum on-resistance against circuit efficiency requirements. Consider the 30 A continuous current capability relative to load demands. Verify compatibility with the PowerPAK SO-8L footprint and ensure adequate PCB copper area is allocated to manage the 5.5 °C/W junction-to-case thermal resistance effectively.

Part Context

This component belongs to the Vishay Siliconix SQJB series of automotive dual N-channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within a compact form factor. The device is specifically engineered for high-reliability automotive environments requiring robust switching capabilities.