SQJB42EP-T1_GE3

$1.27

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:6d32d0c2f7f9 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 25V
Power - Max：48W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJB42EP-T1_GE3

Overview

The SQJB42EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C case temperature. The device exhibits a typical on-state resistance of 7.9 mΩ at VGS = 10 V. Packaged in the leadless PowerPAK SO-8L (PowerPAK SO-8L Dual) format, it operates within a junction temperature range of -55 °C to +175 °C. The component holds AEC-Q101 qualification and undergoes 100% Rg and UIS testing.

Feature Summary

Dual N-channel configuration with independent gate control for each channel
AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK SO-8L package design

Applications

Automotive power distribution systems
High-side and low-side switching applications
Motor control circuits
Lighting control modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the procurement source provides valid traceability data. Confirm that the delivered components match the exact part number specifications regarding package type and electrical ratings before integration into production lines.

Selection Notes

Select this component when a dual N-channel topology is required within a compact footprint. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Verify that the application's voltage and current demands remain within the absolute maximum ratings defined in the datasheet to ensure long-term operational stability.

Part Context

This component belongs to the SQJB series of automotive MOSFETs manufactured by Vishay Siliconix. The series is characterized by its use of TrenchFET technology and availability in the PowerPAK SO-8L package. These devices are engineered specifically for high-reliability automotive environments requiring robust switching capabilities.