SQJB46ELP-T1_BE3

$1.50

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:4ec01ec59ab6 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2100pF @ 25V
Power - Max：34W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJB46ELP-T1_BE3

Overview

The Vishay Siliconix SQJB46ELP is an automotive-grade dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C. The device exhibits a maximum on-resistance of 8 mΩ at VGS = 10 V and 10 mΩ at VGS = 4.5 V. Packaged in a leaded PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
TrenchFET Gen IV technology for optimized performance
Leaded PowerPAK SO-8L package configuration

Applications

Automotive power switching applications
High-side and low-side load switch circuits
DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the leaded PowerPAK SO-8L package meets the thermal and mechanical constraints of the target PCB layout. Ensure design validation accounts for the exposed copper terminal characteristics during soldering processes.

Selection Notes

Select this component when a dual N-channel configuration is required for automotive environments. Evaluate the 8 mΩ on-resistance against system efficiency targets. Consider the 30 A continuous current capability relative to the available thermal dissipation path on the printed circuit board.

Part Context

This part belongs to the Vishay Siliconix SQJB series of automotive MOSFETs. It shares the PowerPAK SO-8L form factor with other devices in the lineup but offers distinct electrical parameters tailored for 40 V automotive systems.