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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2350pF @ 25V
- Power - Max：48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJB48EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0052 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Dual configuration with independent gate and source terminals
- Validated for 100% Rg and Unclamped Inductive Switching (UIS) testing
Applications
- Automotive power distribution systems
- High-side or low-side load switching applications
- DC motor control circuits
Procurement Notes
Verify the specific suffix against official documentation to confirm compliance requirements. Ensure that the ordering information matches the exact component designation required for the design. Cross-reference datasheet revision numbers to validate technical parameters before finalizing procurement specifications.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-case resistance. Confirm that the PCB layout accommodates the exposed copper pads characteristic of the leadless package. Verify that the gate drive voltage aligns with the threshold characteristics for optimal conduction performance.
Part Context
This component belongs to the Vishay Siliconix SQJB series, designed specifically for automotive environments. The series utilizes advanced TrenchFET technology to achieve low on-resistance within compact packages suitable for high-density circuit board implementations.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pin compatibility or electrical equivalence with other dual MOSFET configurations without explicit datasheet confirmation.
