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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 11.3A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：11.3A (Tc)
- Rds On (Max) @ Id, Vgs：95mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：220pF @ 25V
- Power - Max：27W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJB70EP-T1_BE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and operates up to a junction temperature of 175 °C. The device provides two independent channels, each with a continuous drain current of 11.3 A at 25 °C case temperature. The typical on-state resistance (RDS(on)) is 0.095 Ω at VGS = 10 V. Packaged in a leadless PowerPAK SO-8L, it is AEC-Q101 qualified and subjected to 100% gate resistance and unclamped inductive switching tests.
Feature Summary
- Automotive qualification compliant with AEC-Q101 standards for reliability
- Dual configuration integrating two independent N-channel MOSFETs in one package
- TrenchFET power MOSFET architecture optimized for low conduction losses
- Leadless PowerPAK SO-8L package designed for efficient thermal dissipation
Applications
- Automotive power distribution systems
- High-side and low-side load switch applications
- DC-DC converter circuits
- Motor control interfaces
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Ensure that the component meets the required RoHS compliance standards for the target market. Confirm that the application environment remains within the specified absolute maximum ratings to maintain device integrity and warranty coverage.
Selection Notes
Select this component when a dual N-channel configuration is required for space-constrained automotive designs. Evaluate the thermal performance based on the specific PCB copper area and mounting conditions. Consider the gate charge characteristics for driving requirements in high-frequency switching applications.
Part Context
This part belongs to the SQJB series of Vishay Siliconix automotive MOSFETs. The series is characterized by its use of advanced TrenchFET technology to achieve low on-resistance. The PowerPAK SO-8L package is a standard form factor for surface-mount applications requiring robust thermal management.
Replacement Considerations
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other dual MOSFETs without verifying pinout compatibility and electrical parameter limits.
