SQJQ906EL-T1_GE3

$2.64

Description：MOSFET 2N-CH 40V 160A PPAK8X8
Series：TrenchFET®

SKU:9270abec9eb2 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 160A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Rds On (Max) @ Id, Vgs：4.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3238pF @ 20V
Power - Max：187W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 8 x 8 Dual
Supplier Device Package：PowerPAK® 8 x 8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJQ906EL-T1_GE3

Overview

The Vishay Siliconix SQJQ906EL-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 160 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 4.3 mΩ at VGS = 10 V and 5.4 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK 8 x 8L footprint, it is qualified to AEC-Q101 standards and rated for operation up to a junction temperature of 175 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability requirements
TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK 8 x 8L package design for efficient thermal dissipation

Applications

Automotive power distribution systems
High-current DC-DC converter modules
Motor control applications requiring low on-resistance

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance with RoHS directives and material categorization standards. Confirm that the component meets the required AEC-Q101 qualification level for the intended automotive application environment before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount footprint. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Evaluate the thermal management strategy carefully, as the device's power dissipation limits are heavily dependent on the PCB copper area and mounting conditions.

Part Context

This part belongs to the Vishay SQJQ series of automotive dual N-channel MOSFETs. The series utilizes TrenchFET technology to achieve low on-resistance values suitable for high-efficiency power switching applications. The specific model integrates two independent channels within a single leadless package to save board space.