SQS944ENW-T1_GE3

$1.06

Description：MOSFET 2N-CH 40V 6A PWRPAK1212
Series：TrenchFET®

SKU:9d1dd1048017 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 6A PWRPAK1212
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Rds On (Max) @ Id, Vgs：25mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：615pF @ 25V
Power - Max：27.8W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：PowerPAK® 1212-8W Dual
Supplier Device Package：PowerPAK® 1212-8W Dual
Grade：Automotive
Qualification：AEC-Q101

Download product information

SQS944ENW-T1_GE3

Overview

The SQS944ENW-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage and a continuous drain current of 6 A at 25 °C. The device has a maximum on-state resistance of 0.025 Ω at VGS = 10 V and 0.034 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK 1212-8W footprint, it supports junction temperatures up to 175 °C and is qualified under AEC-Q101 standards.

Feature Summary

Dual N-channel configuration with TrenchFET power MOSFET architecture
AEC-Q101 qualified for automotive reliability requirements
100% tested for gate charge and single pulse avalanche capability

Applications

Automotive electronic systems requiring high thermal efficiency
Space-constrained PCB designs needing low-profile surface mount packages
Low-voltage switching applications operating within 40 V limits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. Ensure that the component meets the required environmental and material categorization standards before finalizing procurement. Cross-reference the datasheet revision date to ensure access to the most current technical specifications and testing parameters.

Selection Notes

Select this component when a dual N-channel MOSFET with a 40 V rating is required in a compact PowerPAK 1212-8W package. Consider the 0.025 Ω RDS(on) specification for low-loss switching applications. Verify that the 6 A continuous current rating aligns with the thermal management capabilities of the target printed circuit board layout.

Part Context

This part belongs to the Vishay Siliconix SQS series of automotive MOSFETs. It utilizes the PowerPAK 1212-8W package, which offers a significantly smaller footprint compared to standard TSSOP-8 packages while maintaining superior thermal performance. The series is designed to meet the rigorous demands of modern automotive electronics.