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Product Detailed Parameters
- Description：MOSFET 2N-CH 200V/40V 16A DIE
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual), P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V, 40V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc), 30A (Tc)
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA, 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
- Power - Max：50W (Tc), 48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQUN700E-T1_GE3 is an automotive-grade, AEC-Q101 qualified MOSFET featuring a triple die PowerPAK package. It integrates two N- and P-channel pairs rated at 40 V with continuous drain currents of ±30 A and on-resistances of 9.2 mΩ and 30 mΩ respectively. The third channel is a high-voltage N-channel rated at 200 V with a 16 A current capability and 75 mΩ resistance. Operating across a -55 °C to +175 °C junction temperature range, the device utilizes TrenchFET technology and includes 100% gate resistance and UIS testing for reliability.
Feature Summary
- Triple die configuration integrating low-side and high-side switching capabilities in a single optimized package
- AEC-Q101 qualification ensuring suitability for demanding automotive electronic environments
- TrenchFET power MOSFET technology providing enhanced efficiency and thermal performance
- Comprehensive reliability validation including 100% gate resistance and unclamped inductive switching tests
Applications
- Automotive motor control systems requiring integrated high and low side drivers
- High voltage DC-DC converter topologies utilizing common drain configurations
- Power distribution units within vehicle electrical architectures
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the specific ordering suffix matches the required tape and reel packaging specifications. Ensure compliance with RoHS directives and material categorization standards prior to integration into production assemblies.
Selection Notes
Evaluate the combined current handling requirements of the dual 40 V channels alongside the isolated 200 V channel needs. Consider the thermal dissipation characteristics inherent to the triple die layout when designing heat sinking solutions. Verify that the gate charge parameters align with the driving circuit capabilities to ensure optimal switching speeds.
Part Context
This component belongs to the SQUN series of automotive MOSFETs designed specifically for complex power management applications. The triple die architecture allows designers to consolidate multiple switching functions into a compact footprint, reducing board space and interconnection complexity compared to discrete solutions.
Replacement Considerations
Direct replacements must match the triple die configuration and specific voltage ratings. Verify pin compatibility and thermal resistance values to ensure equivalent performance without redesigning the printed circuit board layout or cooling infrastructure.
