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The SS8050 is a small signal NPN transistor manufactured by HY Electronic (Cayman) Limited, housed in an SOT-23 package. It features a collector current of 1.5A and power dissipation of 300mW. Key electrical parameters include a collector-base breakdown voltage of 40V, collector-emitter breakdown voltage of 25V, and emitter-base breakdown voltage of 5V. The device exhibits a DC current gain ranging from 120 to 400, with a transition frequency of 100MHz. Maximum ratings specify a junction temperature of 150°C and storage temperature range of -55°C to +150°C.
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the SOT-23 pinout matches the intended circuit layout, as variations can occur across different manufacturers. Ensure thermal management aligns with the specified power dissipation limits under actual operating conditions.
Select this component when a compact NPN transistor with a 1.5A continuous collector current capability is required. The SOT-23 package offers space efficiency for surface-mount designs. Consider the 25V collector-emitter breakdown voltage limit when designing circuits with higher supply voltages or transient spikes.
This component belongs to the family of small-signal NPN bipolar junction transistors commonly used in consumer electronics and industrial control systems. It serves as a fundamental switching and amplifying element within electronic circuits, often paired with complementary PNP devices for efficient signal processing and power control tasks.
SS8050-G
The product type marking code on the package is Y1.
The maximum collector-base breakdown voltage is 40V, and the maximum collector-emitter breakdown voltage is 25V.
Yes, it has a transition frequency of 100MHz, making it suitable for moderate-frequency signal processing and amplification.