SS9018HBU-FS

Overview

The SS9018HBU-FS is an NPN silicon RF bipolar transistor manufactured by Fairchild Semiconductor. It features a TO-92 through-hole package with three pins. Key electrical parameters include a collector-emitter voltage (VCEO) of 15 V, an emitter-base voltage (VEBO) of 5 V, and a continuous collector current of 50 mA. The device operates at a transition frequency of 1.1 GHz with a minimum DC current gain (hFE) of 97. Maximum power dissipation is 400 mW, and the junction temperature range extends from -55 °C to +150 °C.

Feature Summary

• High-frequency operation capability suitable for RF applications
• Robust thermal performance with high maximum junction temperature rating
• Standardized TO-92 through-hole packaging for reliable mounting

Applications

• RF signal amplification circuits
• High-frequency oscillator stages
• Small-signal processing in communication equipment

Procurement Notes

Verify the manufacturer designation carefully, as Fairchild Semiconductor's discrete component division was acquired by onsemi. Confirm that the 'FS' suffix corresponds to the specific tape-and-reel or bulk packaging variant intended for your assembly process. Ensure the part number matches the exact electrical specifications required for your design, particularly regarding the 15 V VCEO limit.

Selection Notes

Select this component when an NPN transistor with a 1.1 GHz transition frequency and 50 mA collector current is required. The TO-92 package is suitable for prototyping or low-volume production where through-hole mounting is preferred over surface mount alternatives. Verify that the 400 mW power dissipation rating meets the thermal requirements of the target application environment.

Part Context

This part belongs to the SS9018 series of small-signal NPN transistors designed for radio frequency applications. While originally associated with Fairchild Semiconductor, similar parts are now often distributed under the onsemi brand following industry consolidation. The series is characterized by high current gain bandwidth product and stable performance across a wide temperature range.

Replacement Considerations

Direct substitutes may include other NPN RF transistors with comparable VCEO, IC, and fT ratings. Check datasheets for equivalent packages like TO-92 and ensure pinout compatibility. Generic replacements must match the 15 V breakdown voltage and 50 mA current limits to maintain circuit integrity.