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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9A TCSPAG
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：880mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：10-XFLGA, CSP
- Supplier Device Package：TCSPAG-341501
- Grade：-
- Qualification：-
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Overview
The SSM10N961L,ELF is a single N-channel enhancement mode MOSFET manufactured by Toshiba. It features a common drain configuration with a drain-source breakdown voltage (Vds) of 30 V and a gate-source voltage rating (Vgs) of ±20 V. The device has a gate threshold voltage (Vgs th) of 2.3 V and a total gate charge (Qg) of 17.3 nC. Power dissipation (Pd) is rated at 1.51 W. Switching characteristics include a typical turn-on delay time of 87 ns, rise time of 159 ns, turn-off delay time of 816 ns, and fall time of 494 ns. The maximum operating temperature is +150°C.
Feature Summary
- Common drain structure suitable for battery protection circuits
- Low on-resistance for reduced power loss
- Small and thin package design
Applications
- Battery protection circuits for lithium-ion battery packs in mobile devices
- Consumer electronics including smartphones and tablets
- Portable office and personal equipment
Procurement Notes
Verify the specific suffix ELF against the manufacturer's official datasheet to confirm tape and reel packaging specifications. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the part number with Toshiba's current product lifecycle announcements to confirm availability and obsolescence status before finalizing procurement plans.
Selection Notes
Select this component when a 30 V N-channel common drain MOSFET is required for low-power applications. The 1.51 W power dissipation rating and small package size make it suitable for space-constrained designs. Verify that the 2.3 V threshold voltage aligns with the control logic levels of the driving circuitry. Consider the switching speeds if high-frequency operation is necessary for the target application.
Part Context
This part belongs to Toshiba's SSM series of common drain MOSFETs designed for portable electronic devices. These components are engineered for use in battery protection circuits where low standby power and small footprint are critical. The series utilizes Toshiba's micro-processing technology to achieve low on-resistance and low gate leakage current, enhancing overall system efficiency and battery life in consumer electronics.
Replacement Considerations
The SSM10N954L,EFF is a related common drain MOSFET from Toshiba but operates at a lower 12 V rating. Verify that the higher 30 V rating of the SSM10N961L,ELF is compatible with the circuit requirements. Check pinout compatibility and thermal performance differences between the TCSPAG and other available packages before substitution.
