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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.1A USV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.3pF @ 3V
- Power - Max：200mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package：USV
- Grade：-
- Qualification：-
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Overview
The SSM5N16FU is a dual N-channel silicon MOSFET in a compact SOT-353-5 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 100 mA. The device offers low on-resistance, specified as 3.0 Ω max at VGS = 4 V, 4.0 Ω max at VGS = 2.5 V, and 15 Ω max at VGS = 1.5 V. Gate threshold voltage ranges from 0.6 V to 1.1 V. Total power dissipation is rated at 200 mW at 25°C ambient temperature, with a maximum channel temperature of 150°C.
Feature Summary
- Dual configuration within a compact SOT-353-5 package suitable for high-density mounting
- Low on-resistance characteristics optimized for various gate drive voltages
- High-speed switching capabilities with defined turn-on and turn-off times
Applications
- High speed switching applications
- Analog switching applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and compliance status. Confirm that the component meets all environmental regulations required for the target market. Review the manufacturer's reliability handbook for derating guidelines before finalizing procurement specifications.
Selection Notes
Select this component for circuits requiring dual N-channel MOSFETs in small form factors. Ensure the gate drive voltage aligns with the desired on-resistance performance, as RDS(on) varies significantly between 1.5 V and 4 V thresholds. Verify that the 20 V breakdown voltage and 100 mA current limits accommodate the peak operational demands of the application.
Part Context
This device belongs to Toshiba's line of silicon N-channel field effect transistors designed for general-purpose switching. The SSM5N16FU integrates two independent channels in a single surface-mount package, reducing board space compared to discrete solutions. It serves as a compact alternative for low-voltage signal routing and logic level switching tasks.
Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Do not assume pin-compatible alternatives without verifying electrical parameters such as RDS(on) and V(BR)DSS against the original datasheet requirements.
