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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 1.6A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta), 1.4A (Ta)
- Rds On (Max) @ Id, Vgs：122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.1nC @ 10V, 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：180pF @ 15V, 120pF @ 15V
- Power - Max：500mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6L40TU,LF is a dual MOSFET from Toshiba featuring one N-channel and one P-channel enhancement-mode transistor in a UF-6 surface-mount package. It utilizes U-MOSIII technology for low on-resistance. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, continuous drain current (Id) ranging from 1.4 A to 1.6 A, and gate-source voltage (Vgs) limits of ±20 V. The device exhibits on-resistances (Rds(on)) of 122 mΩ and 226 mΩ, with gate charges (Qg) of 5.1 nC and 2.9 nC respectively. Threshold voltages (Vgs(th)) are specified between 1 V and 2 V. Power dissipation is rated at 500 mW, with an operating temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration integrating complementary N-channel and P-channel transistors within a single compact UF-6 package.
- U-MOSIII silicon technology designed to achieve low on-resistance for improved power efficiency.
- AEC-Q101 qualification ensures reliability suitable for automotive electronic applications.
Applications
- Automotive systems requiring qualified small-signal switching components
- DC-DC converter circuits utilizing dual-channel topology
- Motor driver interfaces for low-voltage control
Procurement Notes
Verify the specific ordering suffix when sourcing. The base model SSM6L40TU,LF differs from variants such as SSM6L40TU(TE85L,F), which indicates a specific tape-and-reel packaging format. Confirm that the required package style matches the project specifications before procurement to ensure compatibility with assembly processes.
Selection Notes
Select this component for designs requiring a matched N/P pair in a minimal footprint. The 30 V rating supports 12 V nominal systems. Ensure thermal management accommodates the 500 mW power dissipation limit. Verify that the gate charge values align with the driving circuit's speed requirements for efficient switching performance.
Part Context
This part belongs to the SSM6L40TU series of dual MOSFETs manufactured by Toshiba Semiconductor and Storage. It is distinct from other series like SSM6J424TU or SSM6P36TU, which feature different voltage ratings, current capacities, or channel configurations. The UF-6 package provides a compact solution compared to larger discrete packages.
Replacement Considerations
Direct substitutes must match the UF-6 package, 30 V rating, and dual N/P configuration. Verify pinout compatibility and electrical parameters against alternative dual MOSFETs from other manufacturers before implementation.
