SSM6L820R,LXHF

$0.78

Description：MOSFET N/P-CH 30V/20V 4A 6TSOPF
Series：-

SKU:9f7720827172 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V/20V 4A 6TSOPF
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V, 20V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Rds On (Max) @ Id, Vgs：39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V, 6.7nC @4.5V
Input Capacitance (Ciss) (Max) @ Vds：310pF @ 15V, 480pF @ 10V
Power - Max：1.4W (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：6-SMD, Flat Leads
Supplier Device Package：6-TSOP-F
Grade：Automotive
Qualification：AEC-Q101

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SSM6L820R,LXHF

Overview

The SSM6L820R,LXHF is a dual-channel, low-voltage MOSFET manufactured by Toshiba Semiconductor and Storage. It integrates one N-channel and one P-channel enhancement-mode transistor within a TSOP6F surface-mount package. The device features a drain-source breakdown voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 4 A. On-resistance values are specified at 39.1 mOhms for the N-channel and 45 mOhms for the P-channel. Gate-source voltage limits range from -8 V to 12 V, with a threshold voltage (Vgs th) of 1 V. Total power dissipation (Pd) is rated at 1.4 W, and the maximum operating temperature reaches +150°C. Typical switching delays are 26 ns for turn-on and 17 ns for turn-off.

Feature Summary

Automotive-grade reliability certified under AEC-Q101 standards
Logic-level gate drive capability with low threshold voltage
Dual configuration combining N-channel and P-channel transistors

Applications

Automotive electronic control units requiring compact dual-transistor solutions
Low-voltage DC-DC converter circuits
Motor driver interfaces in automotive systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number matches the exact suffix LXHF to ensure correct packaging and automotive qualification status. Request original datasheets and test reports to validate AEC-Q101 compliance before integration into production designs.

Selection Notes

Select this component when designing automotive circuits requiring integrated N-P channel pairs in a small footprint. Ensure the 30 V rating aligns with system voltage levels. Verify thermal management capabilities given the 1.4 W power dissipation limit in the TSOP6F package. Consider the 1 V threshold voltage for compatibility with standard logic-level drivers.

Part Context

This part belongs to Toshiba's automotive MOSFET portfolio, specifically designed for high-reliability applications. The SSM6L series utilizes advanced silicon technology to achieve low on-resistance and fast switching speeds. Packaging in TSOP6F allows for efficient PCB space utilization in dense automotive electronics assemblies.