SSM6N15AFU,LF

Overview

The SSM6N15AFU,LF is a dual N-channel silicon MOSFET utilizing U-MOS III technology in a US6 (SOT-363) surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 100 mA. The device supports 2.5 V logic drive with a maximum on-resistance of 6.0 Ω at VGS = 2.5 V and 3.6 Ω at VGS = 4.0 V. Gate-source voltage limits are ±20 V, while power dissipation reaches 300 mW on an FR4 board. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Integrated dual N-channel configuration within a compact surface-mount footprint for high-density mounting.
• Optimized low on-resistance characteristics enabling efficient switching performance at 2.5 V gate drive levels.
• High thermal stability supporting operation up to a channel temperature of 150°C.

Applications

• Load switching applications
• Analog switching circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and environmental compliance status. Confirm that the component meets RoHS requirements for the target market. Review the manufacturer's reliability handbook for derating guidelines regarding thermal management and electrical stress limits before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring dual N-channel isolation in minimal space. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate the thermal resistance relative to the PCB copper pad area, as power dissipation capabilities depend heavily on board material and layout dimensions.

Part Context

This part belongs to the SSM6N15 series of small signal MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOS III process technology to achieve improved switching speeds and lower conduction losses compared to previous generations. The US6 package provides a standardized footprint compatible with automated surface-mount assembly processes.

Replacement Considerations

Direct replacements must match the 30 V VDSS, 100 mA ID, and US6 package constraints. Verify that alternative dual N-channel MOSFETs maintain comparable RDS(ON) values at 2.5 V and 4.0 V gate drives to ensure circuit compatibility without redesigning the gate driver stage.