SSM6N16FE,L3F

Overview

The SSM6N16FE,L3F is a dual N-channel silicon MOSFET from Toshiba, packaged in the compact ES-6 (SOT-563) form factor. It features a drain-source voltage rating of 20 V and a continuous drain current of 100 mA. The device exhibits low on-resistance values of 3.0 Ω max at VGS = 4 V, 4.0 Ω max at VGS = 2.5 V, and 15 Ω max at VGS = 1.5 V. Key electrical parameters include a gate threshold voltage range of 0.6 V to 1.1 V, forward transfer admittance of 40 mS, and input capacitance of 9.3 pF. Switching performance includes turn-on and turn-off times of 70 ns and 125 ns respectively. Total power dissipation is rated at 150 mW with a maximum channel temperature of 150 °C.

Feature Summary

• Dual N-channel configuration integrated into a single compact package for high-density mounting
• Optimized low on-resistance characteristics across multiple gate drive voltages
• Fast switching capabilities suitable for high-speed signal processing applications

Applications

• High-speed switching circuits
• Analog signal switching
• Portable electronic devices requiring compact component footprints

Procurement Notes

Verify the specific ordering suffix L3F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives and confirm the manufacturer source directly from Toshiba Electronic Devices & Storage Corporation or authorized distributors. Validate that the ES-6 package dimensions match your PCB layout requirements before finalizing procurement orders.

Selection Notes

Select this component when space constraints necessitate a dual N-channel MOSFET in an SMD package. Consider the 20 V breakdown voltage and 100 mA current limits for appropriate load matching. Evaluate the gate drive voltage levels required to achieve the desired on-resistance, as Ron varies significantly between 1.5 V and 4 V gate thresholds. Ensure thermal management supports the 150 mW dissipation rating under operating conditions.

Part Context

This part belongs to Toshiba's small-signal MOSFET portfolio designed for portable electronics. The SSM6N16FE utilizes the ES-6 package to provide two independent N-channel transistors in a minimal footprint. It serves as a discrete solution for signal routing and switching tasks where board area is limited but dual-channel functionality is required.

Replacement Considerations

Direct pin-compatible replacements within the same ES-6 package should be evaluated based on matching VDS, ID, and Ron specifications. Verify that any substitute maintains similar switching times and capacitance values to ensure circuit timing integrity without redesign.