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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.65A 6TSOPF
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：650mA (Ta)
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：60pF @ 12V
- Power - Max：1.5W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：6-TSOP-F
- Grade：-
- Qualification：-
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Overview
The SSM6N357R is a silicon N-channel MOSFET in a TSOP6F package, designed for relay driver applications. It features an AEC-Q101 qualification and supports a 3.0-V gate drive voltage. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 650 mA, and a pulsed drain current of 1300 mA. The device incorporates built-in internal Zener diodes and resistors. Static characteristics specify a maximum on-resistance of 2.4 Ω at 3 V gate drive and 1.8 Ω at 5 V. Dynamic performance includes a typical turn-on time of 990 ns and a total gate charge of 1.5 nC.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Operates with a low 3.0-V gate drive voltage
- Integrates internal Zener diodes and resistors for protection
Applications
- Relay Drivers
Procurement Notes
Verify the specific ordering suffix to confirm packaging details such as tape and reel quantities or cut tape availability. Confirm RoHS compliance status directly with Toshiba sales representatives prior to procurement. Ensure that the intended application does not fall under restricted categories like nuclear or aerospace systems. Review the latest datasheet revision for any updates to absolute maximum ratings or thermal derating curves.
Selection Notes
Select this component when a compact N-channel MOSFET with integrated gate protection is required for low-voltage switching. The 60 V rating and 650 mA current capacity suit small signal loads. Verify that the 3.0 V drive capability aligns with the controller logic levels. Consider the thermal dissipation limits in the TSOP6F package for continuous operation scenarios.
Part Context
This part belongs to Toshiba's silicon N-channel MOSFET series tailored for automotive and industrial control circuits. The TSOP6F package provides a surface-mount solution suitable for space-constrained designs. The inclusion of internal protection components simplifies circuit design by reducing external component count.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Toshiba sales for potential cross-reference options if supply constraints exist.
FAQ
What is the purpose of the built-in internal Zener diodes?
The internal Zener diodes protect the gate-source junction from overvoltage conditions, eliminating the need for external clamping components.
Can this MOSFET be used in high-temperature environments?
Yes, the device is rated for a channel temperature up to 150 °C and a storage temperature range of -55 °C to 150 °C.
How does the gate drive voltage affect performance?
The device is optimized for a 3.0 V gate drive, which results in a higher on-resistance (2.4 Ω) compared to a 5 V drive (1.8 Ω).
