SSM6N36TU,LF

SSM6N36TU,LF

$0.43
  • Description:MOSFET 2N-CH 20V 0.5A UF6
  • Series:-

SKU:3d7fd0d92942 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.5A UF6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
  • Rds On (Max) @ Id, Vgs:630mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 10V
  • Power - Max:500mW (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:UF6
  • Grade:-
  • Qualification:-

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SSM6N36TU,LF

Overview

The SSM6N36TU,LF is a dual N-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSIII technology and is housed in a UF-6 (SOT-363F) surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 500 mA. Key electrical parameters include a maximum on-resistance (Rds(on)) of 630 mOhms at Vgs = 5 V, a gate-source voltage rating (Vgs) of ±5 V, and a threshold voltage (Vgs(th)) of 1 V. The component has a power dissipation (Pd) of 500 mW, a gate charge (Qg) of 1.23 nC, and supports an operating temperature range up to +150°C. It is AEC-Q101 qualified for automotive applications.

Feature Summary

  • Dual N-channel configuration integrated into a compact UF-6 surface-mount package for space-constrained designs.
  • U-MOSIII technology provides low on-resistance and fast switching characteristics suitable for signal and high-speed applications.
  • AEC-Q101 qualification ensures reliability and compliance with automotive electronic component standards.

Applications

  • Small-signal and high-speed switching circuits
  • Automotive electronics requiring AEC-Q101 compliant components
  • DC-DC converter output stages

Procurement Notes

Verify the complete part number including the suffix

Selection Notes

Select this component when a dual N-channel MOSFET with 20 V rating and 500 mA current capacity is required in a small footprint. Ensure the application operates within the ±5 V gate-source voltage limit and does not exceed the 500 mW power dissipation rating without adequate thermal management.

Part Context

This part belongs to the SSM6N36 series of dual N-channel MOSFETs from Toshiba. It shares the same electrical specifications as the SSM6N36FE,LM but differs in packaging, utilizing the UF-6 form factor instead of the ES6-6 package. Both variants are designed for similar low-voltage switching applications.

Replacement Considerations

The SSM6N36FE,LM is a functional equivalent with identical electrical parameters but uses an ES6-6 package. Verify pinout compatibility and physical dimensions before substitution.

SSM6N36TU,LFSSM6N36TU,LF
$0.43
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