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The SSM6N36TU,LF is a dual N-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSIII technology and is housed in a UF-6 (SOT-363F) surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 500 mA. Key electrical parameters include a maximum on-resistance (Rds(on)) of 630 mOhms at Vgs = 5 V, a gate-source voltage rating (Vgs) of ±5 V, and a threshold voltage (Vgs(th)) of 1 V. The component has a power dissipation (Pd) of 500 mW, a gate charge (Qg) of 1.23 nC, and supports an operating temperature range up to +150°C. It is AEC-Q101 qualified for automotive applications.
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Select this component when a dual N-channel MOSFET with 20 V rating and 500 mA current capacity is required in a small footprint. Ensure the application operates within the ±5 V gate-source voltage limit and does not exceed the 500 mW power dissipation rating without adequate thermal management.
This part belongs to the SSM6N36 series of dual N-channel MOSFETs from Toshiba. It shares the same electrical specifications as the SSM6N36FE,LM but differs in packaging, utilizing the UF-6 form factor instead of the ES6-6 package. Both variants are designed for similar low-voltage switching applications.
The SSM6N36FE,LM is a functional equivalent with identical electrical parameters but uses an ES6-6 package. Verify pinout compatibility and physical dimensions before substitution.