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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.6A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Rds On (Max) @ Id, Vgs：119mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：260pF @ 10V
- Power - Max：500mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6N39TU,LF is a silicon N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a dual configuration (2-in-1) in a UF-6 package. The device supports a drain-source voltage of 20 V and a continuous drain current of 1.6 A. Key electrical parameters include a gate-source threshold voltage of 0.35 V to 1.0 V, total gate charge of 7.5 nC, and forward transfer admittance of 2.5 S. Drain-source ON-resistance varies from 87 mΩ at VGS = 4.0 V to 247 mΩ at VGS = 1.5 V. Switching times are characterized by turn-on time of 8.3 ns and turn-off time of 11.5 ns under specified test conditions.
Feature Summary
- Designed for low-voltage drive applications with support for 1.5 V gate-source operation.
- Integrates two independent N-channel MOSFETs within a single compact package.
- Optimized for high-speed switching performance with low input capacitance.
Applications
- Power management switch circuits
- High-speed switching applications
Procurement Notes
Verify the component authenticity against the official Toshiba datasheet specifications. Confirm that the UF-6 package dimensions and pinout match the required circuit layout. Ensure the operating temperature range aligns with the system's thermal design constraints. Check for RoHS compliance status if environmental regulations apply to the final assembly.
Selection Notes
Select this component when a dual N-channel configuration is required for space-constrained designs. Evaluate the ON-resistance requirements against the specific gate drive voltage available in the system, as RDS(on) increases significantly at lower voltages like 1.5 V. Consider the thermal dissipation capabilities on the target PCB footprint.
Part Context
This part belongs to the SSM6N39TU series of small-signal MOSFETs. It is distinct from higher-power variants like the SSM6N58NU due to its lower current rating and specific low-voltage optimization. The UF-6 package provides a balance between thermal performance and board space efficiency for portable electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility carefully if considering alternatives from other manufacturers, as pinouts and electrical characteristics may differ.
