SSM6N62TU,LF

Overview

The SSM6N62TU,LF is a dual N-channel silicon MOSFET in a UF6 surface-mount package. It supports power management switches and DC-DC converters with AEC-Q101 qualification for automotive use. The device features a drain-source voltage of 20 V and a continuous drain current of 0.8 A at 25°C. On-resistance ranges from 67 mΩ to 121 mΩ depending on gate drive levels between 4.5 V and 1.2 V. Total gate charge is typically 2.0 nC at 4.5 V. Power dissipation reaches 500 mW, with an operating temperature range up to 150°C.

Feature Summary

• AEC-Q101 qualified for automotive applications
• Capable of operation with low 1.2-V gate drive signals
• Optimized low drain-source on-resistance across various gate voltages

Applications

• Power Management Switches
• DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official list to confirm intended use classification. The standard LF suffix indicates general use, while LXGF and LXHF variants are designated for automotive applications under AEC-Q101 standards. Ensure the selected part number matches the required reliability level before procurement.

Selection Notes

Select this component for low-voltage switching circuits requiring compact surface-mount integration. Evaluate thermal performance based on the 500 mW power dissipation limit and board copper pad area. Confirm that the application logic provides sufficient gate voltage to achieve the desired on-resistance threshold for efficient power handling.

Part Context

This dual N-channel MOSFET belongs to Toshiba's low-voltage discrete semiconductor portfolio designed for space-constrained electronics. The UF6 package facilitates automated surface-mount assembly. The device integrates two independent channels within a single compact footprint to support differential or parallel switching configurations.

Replacement Considerations

No public confirmed substitute part numbers are available.