SSM6N7002BFU,LF

Overview

The SSM6N7002BFU,LF is a dual N-channel silicon MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOS IV technology. It features a US6 (SC-88) surface-mount package with six pins. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 200 mA, and a maximum power dissipation of 300 mW at 25°C. The device offers low on-resistance values of 3.3 Ω max at VGS = 4.5 V, 2.6 Ω max at VGS = 5 V, and 2.1 Ω max at VGS = 10 V. Gate threshold voltage ranges from 1.5 V to 3.1 V, with an operating temperature range of -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode MOSFETs within a compact SC-88 package.
• Low ON-resistance characteristics optimized for efficient switching performance across various gate drive voltages.
• High-speed switching capability supported by fast turn-on and turn-off delay times suitable for rapid signal transitions.

Applications

• High-speed switching applications
• Analog switch circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Confirm component availability through authorized distributors as lifecycle status may vary. Ensure all handling procedures strictly follow electrostatic discharge protection guidelines during storage and assembly.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a minimal footprint. Evaluate thermal derating requirements carefully, as total power dissipation is limited to 300 mW. Verify that the application's gate drive voltage aligns with the specified thresholds to ensure optimal RDS(ON) performance and switching speed.

Part Context

This part belongs to the SSM6N7002 series of small-signal MOSFETs designed for general-purpose switching. It utilizes Toshiba's U-MOS IV process technology to achieve improved switching speeds and lower on-resistance compared to standard planar devices. The dual configuration allows for space-constrained designs requiring multiple switching elements.

Replacement Considerations

Direct replacements must match the 60V/200mA rating, US6 package, and dual N-channel configuration. Verify pinout compatibility and electrical parameters such as RDS(ON) and Vth before substitution.