SSM6N7002BFU(T5L,F

Overview

The SSM6N7002BFU is a dual N-channel silicon MOSFET utilizing Toshiba U-MOS IV technology, housed in a compact US6 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 200 mA. The device offers low on-resistance values of 3.3 Ω (max) at VGS = 4.5 V, 2.6 Ω (max) at VGS = 5 V, and 2.1 Ω (max) at VGS = 10 V. Electrical characteristics include a gate threshold voltage range of 1.5 V to 3.1 V, a maximum gate leakage current of ±10 μA, and a total power dissipation of 300 mW at 25°C ambient temperature.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode transistors within a single compact footprint.
• High-speed switching capability supported by optimized internal capacitance and low turn-on/turn-off delay times.
• Low ON-resistance design achieved through U-MOS IV trench technology for improved conduction efficiency.
• Robust thermal performance with a channel temperature limit of 150°C and storage range from -55°C to 150°C.

Applications

• High-speed switching circuits requiring fast transition times.
• Analog switch applications for signal routing.
• Load switching in portable electronic devices.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and tape-and-reel specifications. Confirm RoHS compliance status and environmental declarations directly with the supplier or distributor prior to procurement. Ensure that the component version matches the required reliability standards for the intended application environment.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal space-constrained layout. Evaluate the 60V breakdown voltage and 200mA current limits against circuit requirements. Consider the RDS(ON) variations across different gate drive voltages (4.5V, 5V, 10V) to ensure adequate drive levels are available for optimal conduction performance.

Part Context

This part belongs to Toshiba's small-signal MOSFET portfolio designed for general-purpose switching. It utilizes the US6 (SC-88) package, which is standard for low-power surface-mount applications. The device represents an evolution in small-package FETs, balancing electrical performance with physical size constraints typical in modern consumer electronics.

Replacement Considerations

Check for direct pin-compatible alternatives within the same series or similar packages. Verify that any substitute maintains the 60V VDS rating and comparable RDS(ON) characteristics. Ensure the replacement supports the required switching speeds and thermal dissipation capabilities for the specific board layout.