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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 0.1A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.1pF @ 3V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
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Overview
The SSM6P15FE is a dual P-channel MOSFET from Toshiba, designed for high-speed switching and analog applications. It features a compact ES6-6 package with two independent channels. The device supports a drain-source voltage of -30 V and a continuous drain current of -100 mA. At VGS = -4 V, the maximum on-resistance is 12 Ω, while at VGS = -2.5 V, it reaches 32 Ω. The gate threshold voltage ranges from -1.1 V to -1.7 V. Total power dissipation is rated at 150 mW at 25°C ambient temperature. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration in a small surface-mount package
- Low on-resistance optimized for low-voltage drive signals
- High-speed switching capability suitable for analog applications
Applications
- High-speed switching circuits
- Analog switch applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications or cut tape availability. Ensure that the component meets all relevant environmental compliance standards required by the target application before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel MOSFET is required for low-voltage logic interfaces. The device is appropriate for systems operating with gate drive voltages between -2.5 V and -4 V. Consider the thermal derating requirements if the ambient temperature exceeds standard conditions or if the total power dissipation limit is approached.
Part Context
This part belongs to the SSM6 series of small-signal MOSFETs manufactured by Toshiba Electronic Devices & Storage Corporation. The series focuses on providing matched pairs in compact packages to facilitate efficient board space utilization in portable and consumer electronics designs requiring reliable signal switching.
Replacement Considerations
Consult the official Toshiba replacement guide for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying pinout compatibility, absolute maximum ratings, and electrical characteristics match.
