SSM6P56FE,LM

Overview

The SSM6P56FE,LM is a dual P-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It integrates two independent P-channel transistors within a single surface-mount package to facilitate load switching applications. The device features a drain-source voltage rating of 20V and a continuous drain current capacity of 1A per channel. Key electrical parameters include a maximum on-resistance of 0.4 ohms at a gate-source voltage of -4.5V, ensuring efficient power handling in low-voltage circuits. The component operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration for space-efficient circuit design
• Low on-resistance for improved power efficiency
• High thermal stability suitable for demanding environments

Applications

• Load switching in portable electronic devices
• Power management circuits for battery-operated equipment
• Protection circuits in automotive infotainment systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure that the procurement source provides valid traceability data consistent with Toshiba Semiconductor and Storage quality standards. Cross-reference the part number with the latest datasheet revision to confirm parameter accuracy before finalizing purchase orders.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage load switching. Evaluate the 0.4-ohm on-resistance against the circuit's thermal dissipation requirements. Confirm that the 20V voltage rating exceeds the maximum operating voltage of the target application to ensure long-term reliability under varying load conditions.

Part Context

This component belongs to Toshiba's series of small-signal MOSFETs designed for integrated power management. It serves as a consolidated alternative to discrete single-channel transistors, reducing board space and assembly complexity. The dual configuration supports synchronized or independent control of multiple loads within a single footprint.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference material. Verify functional equivalence with other dual P-channel MOSFETs by comparing pin configurations, voltage ratings, and on-resistance values directly with the manufacturer's cross-reference lists.