SST111 SOT-23 3L ROHS

SST111 SOT-23 3L ROHS

$6.23
  • Description:JFET N-CH 35V SOT23-3
  • Series:SST111

SKU:e1dfd27dbc68 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 35V SOT23-3
  • Series:SST111
  • Mfr:Linear Integrated Systems, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):35 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:12pF @ 10V
  • Resistance - RDS(On):30 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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SST111 SOT-23 3L ROHS

Overview

The SST111 is a single N-channel JFET switch manufactured by Linear Integrated Systems in a SOT-23 package. It serves as a direct replacement for the Siliconix J/SST111 series. Key electrical characteristics include a gate-to-source cutoff voltage (VGS(off)) ranging from -3V to -10V, a drain-to-source on-resistance (rDS(on)) of 30Ω at VGS=0V, and a typical gate leakage current of 5pA. The device features fast switching with a turn-on time of 4ns and supports a continuous power dissipation of 350mW.

Feature Summary

  • Direct replacement compatibility with the Siliconix J/SST111 series
  • Ultra-low gate leakage current specification of 5pA
  • Fast switching capability with a 4ns turn-on time

Applications

  • Low noise signal switching circuits
  • High impedance buffer stages
  • Precision analog signal routing

Procurement Notes

Verify that the specific ordering suffix matches the required package type, as the datasheet indicates availability in both SOT-23 and TO-92 configurations. Confirm RoHS compliance status through official documentation or supplier declarations prior to procurement. Ensure the component source is authorized to guarantee authenticity and traceability.

Selection Notes

Select this component when low gate leakage and high input impedance are critical requirements. The 30Ω on-resistance makes it suitable for applications requiring minimal signal attenuation. Consider the -3V to -10V VGS(off) range to ensure proper biasing for the intended control logic levels.

Part Context

Linear Integrated Systems produces this discrete semiconductor using proprietary processes derived from expertise at Amelco, Union Carbide, Intersil, and Micro Power Systems. The company focuses on high-performance discrete devices, positioning this JFET within their portfolio of specialized analog switches.

Replacement Considerations

This part is documented as a direct replacement for the Siliconix J/SST111 series. Verify pinout compatibility between SOT-23 and legacy packages if substituting into existing designs.

FAQ

What is the maximum gate-to-source breakdown voltage?

The maximum gate-to-source breakdown voltage (BVGSS) is -35V.

How does the on-resistance vary across the series?

The rDS(on) is specified at 30Ω for the J/SST111, 50Ω for the J/SST112, and 100Ω for the J/SST113.

What is the typical forward transconductance?

The typical forward transconductance (gfs) is 6mS under conditions of VDS = 20V and ID = 1mA.

SST111 SOT-23 3L ROHSSST111 SOT-23 3L ROHS
$6.23
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