SST308 SOT-23 3L ROHS

$4.11

Description：JFET N-CH 25V SOT23-3
Series：SST308

SKU:a651204a0b99 Category: JFETs Brand: Linear Integrated Systems, Inc.

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Product introduction

SST308 SOT-23 3L ROHS is listed in the Jfets range at ChipApex. The manufacturer field lists Linear Integrated Systems, Inc.. Its product description is JFET N-CH 25V SOT23-3. Review the specifications below when checking this part for your BOM.

Jfets specifications for SST308 SOT-23 3L ROHS

Description：JFET N-CH 25V SOT23-3
Series：SST308
Mfr：Linear Integrated Systems, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：25 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
Resistance - RDS(On)：35 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

Jfets datasheet and documents for SST308 SOT-23 3L ROHS

SST308 SOT-23 3L ROHS

Jfets Overview

The SST308 is a single N-channel high-frequency JFET amplifier in a SOT-23 package. It provides an outstanding power gain of 11.5 dB at 450 MHz and a noise figure of 2.7 dB at the same frequency. The device features a gate-to-source breakdown voltage of -25 V, a drain-to-source on resistance of 35 Ω, and a forward transconductance of 13 mS at 450 MHz. It operates within a junction temperature range of -55°C to 150°C with continuous power dissipation of 350 mW.

Jfets Feature Summary

Designed as a direct replacement for the SILICONIX U/J/SST308 series
Optimized for high-frequency signal amplification applications
Engineered for low high-frequency noise performance

Jfets Applications

High-frequency RF amplification circuits
Low-noise signal processing stages
Direct replacement for legacy SILICONIX SST308 designs

Jfets Procurement Notes

Verify that the specific ordering suffix matches the required package configuration. Confirm that the component meets all absolute maximum ratings for your operating environment. Ensure compatibility with existing PCB footprints designed for the SOT-23 form factor. Review datasheet specifications for thermal derating requirements above 25°C.

Jfets Selection Notes

Select this component when a direct drop-in replacement for the SILICONIX SST308 is required in a compact SOT-23 footprint. Consider its 11.5 dB power gain and 2.7 dB noise figure at 450 MHz for RF applications. Evaluate the -25 V breakdown voltage against circuit voltage constraints. Compare thermal dissipation limits with available board space for heat management.

Jfets Part Context

Linear Integrated Systems manufactures this discrete semiconductor using proprietary processes derived from expertise at Amelco, Union Carbide, Intersil, and Micro Power Systems. The company focuses on producing high-performance semiconductors, leveraging historical technical foundations established since its founding in 1987 by John H. Hall.

Jfets Replacement Considerations

This part serves as a direct replacement for the SILICONIX U/J/SST308 series components. Verify pinout compatibility and electrical parameter tolerances before substituting into existing designs.