ST24180

Overview

The ST24180 is a 180 W, internally-matched LDMOS FET designed for RF energy applications operating at frequencies from 2400 to 2500 MHz. It is qualified for operations requiring up to 32 V supply voltage. The device integrates input matching and ESD protection to simplify circuit design. It supports high efficiency and linear gain operations with a large positive and negative gate/source voltage range suitable for improved Class C operation.

Feature Summary

• Internally matched LDMOS FET structure
• Integrated ESD protection
• High efficiency and linear gain operations
• Large positive and negative gate/source voltage range

Applications

• RF cooking equipment
• Industrial heating systems
• Medical RF devices

Procurement Notes

Verify the specific package type and pinout configuration against the official datasheet before integration. Confirm that the 32 V maximum rating aligns with the target power supply design. Ensure thermal management solutions meet the requirements for 180 W dissipation in the intended application environment.

Selection Notes

Select this component for applications requiring robust RF power generation in the 2.4–2.5 GHz ISM band. The internal matching network reduces external component count. Consider the device's suitability for Class C operation when optimizing for efficiency in heating or medical contexts.

Part Context

This part belongs to STMicroelectronics' portfolio of RF power transistors. It utilizes LDMOS technology to deliver high power density. The device is distinct from standard communication amplifiers as it targets industrial and consumer RF energy markets rather than telecommunications infrastructure.

Replacement Considerations

No public confirmed substitute part numbers are available.