ST50V10100

Overview

The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats.

Feature Summary

• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate/source voltage range
• In compliance with the European Directive 2002/95/EC

Applications

• Broadband commercial applications
• Avionics systems
• Industrial applications

Procurement Notes

Verify component status as the ST50V10100 is listed as obsolete. Confirm availability through authorized distributors or secondary market channels. Ensure documentation matches the specific part number and revision level required for integration into legacy or replacement designs.

Selection Notes

Select this component for RF power amplification tasks operating within the 1.5 GHz frequency range. Consider its suitability for Class A, AB, and C amplifier configurations across various modulation schemes. Evaluate thermal management requirements given its power handling capabilities in LDMOS technology.

Part Context

This device belongs to STMicroelectronics' portfolio of RF power LDMOS transistors. It serves as a specialized semiconductor solution for high-frequency signal amplification, distinct from general-purpose logic or power switching devices offered by the manufacturer.

Replacement Considerations

As the ST50V10100 is marked obsolete, identify equivalent RF LDMOS transistors from current production lines or alternative manufacturers that match the 1.5 GHz frequency limit and package specifications for direct substitution.