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The ST9060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics, and industrial applications up to 1.5 GHz. It supports Class A, AB, and C amplifier configurations with excellent thermal stability. At 28 V supply voltage, it delivers an output power of 80 W with 17 dB gain and 70% efficiency at 945 MHz. The device features integrated HBM Class 2 ESD protection and operates within a maximum junction temperature of 200 °C. It utilizes the M243 package and complies with European Directive 2002/95/EC.
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Select this component for designs requiring high output power in the HF range up to 1.5 GHz. Ensure the application circuit can handle the specified drain-source voltage and thermal dissipation requirements. Verify impedance matching networks align with the provided input and load impedance data for optimal performance across the target frequency band.
This LDMOS transistor belongs to STMicroelectronics' portfolio of RF power devices intended for high-frequency applications. It serves as a robust solution for linear amplification in demanding environments where thermal management and signal integrity are critical for system reliability.
No public confirmed substitute part numbers are available in the documentation.