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The STAC1011-350 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for avionics applications. It operates within the frequency range of 1.03 GHz to 1.09 GHz. The device features a drain-source breakdown voltage of 80 V and delivers a maximum output power of 370 W. Key electrical specifications include a continuous drain current of 2 uA, an operating frequency span of 1.03–1.09 GHz, and a gain of 15 dB.
Verify the specific datasheet version (STAC1011-350.pdf) against the manufacturer's official documentation to ensure parameter accuracy. Confirm that the 80V rating and 370W output power align with your system requirements. Check for any suffix variations such as 'F' which may indicate different performance characteristics like the 370W output power variant. Ensure compatibility with the STAC265B series context if referenced in design documents.
Select this component when high output power at UHF frequencies is required for avionics or industrial use. The 15 dB gain and 80V breakdown voltage define its operational envelope. Consider the 1.03–1.09 GHz frequency range for signal integrity. Compare against the STAC265B series for potential alternative configurations. Verify thermal management needs for 370W output.
The STAC1011-350 belongs to the STAC1011 series of RF MOSFET transistors from STMicroelectronics. It is categorized under FET RF components with an 80V rating and 1.09 GHz operation. The part is identified by the STAC265B designation in some contexts. It represents a new lifecycle stage from the manufacturer, indicating current production status.
Public confirmed substitute part numbers are not available in the provided data. Consult STMicroelectronics for direct replacements within the STAC series.