STAC150V2-350E

STAC150V2-350E

$84.48
  • Description:RF MOSFET 150V STAC177B
  • Series:-

SKU:30b39f4c3fa5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 150V STAC177B
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:40.68MHz
  • Gain:16.5dB
  • Voltage - Test:150 V
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:500W
  • Voltage - Rated:700 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:STAC177B
  • Supplier Device Package:STAC177B
  • Configuration:N-Channel

Download product information

STAC150V2-350E

Overview

The STAC150V2-350E is a high-voltage N-channel MOS field-effect RF power transistor designed for industrial RF power Class E generators. It operates at frequencies up to 40.68 MHz with a drain-source voltage rating of 700 V and a maximum junction temperature of 200 °C. At 40.68 MHz and 150 V supply, it delivers 350 W output power with 17 dB gain, achieving up to 500 W output with 16.5 dB gain under specific test conditions. The device utilizes STAC air cavity packaging technology, offering 25% lower thermal resistance compared to equivalent ceramic packages.

Feature Summary

  • STAC air cavity packaging technology providing superior thermal stability
  • Designed specifically for Class E operation in industrial RF generators
  • High breakdown voltage exceeding 700 V for robust performance

Applications

  • PECVD plasma sputtering equipment
  • Flat panel manufacturing equipment
  • Solar cells manufacturing equipment

Procurement Notes

Verify the component against the official STMicroelectronics datasheet (Doc ID 024198 Rev 1) to confirm technical specifications and compliance with RoHS directives. Ensure that the STAC177B plastic tray packaging matches the required handling and storage humidity levels specified in the shipping documentation. Cross-reference the marking layout and lot codes to validate authenticity and traceability before integration into production systems.

Selection Notes

Select this component for applications requiring high-voltage RF power generation in the HF/VHF/UHF bands. The device is optimized for Class E topology and offers enhanced thermal management through its unique air cavity package. Consider the 700 V drain-source breakdown voltage and 200 °C maximum junction temperature when designing heat dissipation and protection circuits for industrial plasma and manufacturing environments.

Part Context

This part belongs to the STAC series of RF power transistors from STMicroelectronics, which utilize proprietary air cavity packaging for improved thermal performance. The STAC150V2-350E is positioned as a solution for high-power industrial applications, distinguishing itself from standard ceramic-packaged devices by its reduced thermal resistance and suitability for demanding Class E generator designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

STAC150V2-350ESTAC150V2-350E
$84.48
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