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The STAC2932B is an N-channel silicon RF power MOSFET designed for large-signal applications up to 250 MHz. It delivers a typical output power of 580 W with 24.6 dB gain at 123 MHz. The device features a continuous drain current of 20 A and a drain-source breakdown voltage of 250 V. It operates within a temperature range of -65 °C to +150 °C and utilizes the ST air-cavity STAC-244B package for superior thermal stability.
Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your supply chain requirements. Ensure proper handling procedures are followed due to the sensitivity of RF semiconductor devices during storage and installation.
Select this component when designing circuits requiring high output power around 580 W in the HF/VHF/UHF bands. Consider the 250 V drain-source voltage rating for robustness against voltage transients. Evaluate the STAC-244B package dimensions for PCB layout compatibility and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits.
The STAC2932B belongs to the STAC series of RF power transistors from STMicroelectronics. This series is characterized by the use of proprietary air-cavity packaging, which minimizes parasitic inductance and improves heat dissipation compared to traditional plastic packages. These devices are engineered specifically for demanding radio frequency applications where efficiency and power density are critical design parameters.
Direct substitutes include the STAC3932B, which shares identical electrical specifications and pinout configurations. Designers should verify that any replacement maintains the same STAC-244B footprint and thermal characteristics to ensure seamless integration without modifying the existing printed circuit board layout.