STAC2932F

Overview

The STAC2932F is an RF MOSFET manufactured by STMicroelectronics, designed for high-power radio frequency applications. It operates with a drain-source voltage rating of 50 V and delivers a minimum output power of 390 W at 175 MHz. The device features a continuous drain current capacity of 40 A and is tested at 250 mA. It utilizes the STAC244F package configuration and supports screw mounting. This component is classified as an N-channel MOSFET technology suitable for demanding RF environments.

Feature Summary

• Gold metallization provides excellent thermal stability for reliable operation under high-power conditions.
• Designed for common source push-pull configurations to maximize efficiency in RF circuits.
• Capable of delivering high output power with significant gain at specified operating frequencies.

Applications

• RF power amplification in broadcast transmitters
• Large signal applications up to 250 MHz
• Industrial RF heating and plasma generation systems

Procurement Notes

Verify the exact suffix (e.g., FW) against the datasheet to ensure correct packaging and handling specifications. Confirm RoHS3 compliance status if environmental regulations apply to your region. Check for end-of-life notices or obsolescence warnings before finalizing procurement plans. Ensure the supplier provides valid traceability documentation for critical RF components.

Selection Notes

Select this component when designing circuits requiring high output power around 175 MHz. Ensure the thermal management system can handle the heat dissipation associated with 390 W output. Verify that the drive circuitry matches the gate charge requirements of the N-channel MOSFET structure. Consider the STAC244F package dimensions for PCB layout compatibility.

Part Context

This part belongs to the STAC293 series of RF power transistors from STMicroelectronics. These devices are engineered for robust performance in high-frequency environments. The series typically includes variants optimized for specific voltage and power levels within the VHF/UHF bands.

Replacement Considerations

The SD2932 is a similar gold-metallized N-channel MOS RF power transistor offering 300 W minimum output at 175 MHz. Verify pinout compatibility and thermal resistance differences before substitution. Ensure the replacement meets the required 50 V DC large signal application constraints.