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The STAC2942BW is a gold metallized N-channel MOS field-effect RF power transistor designed for large signal applications up to 250 MHz. It utilizes ST air-cavity STAC packaging technology and operates with a 50 V DC supply. The device delivers a minimum output power of 350 W with 21 dB gain at 175 MHz. Key characteristics include excellent thermal stability, common source push-pull configuration capability, and compliance with the 2002/95/EC European directive.
Verify the specific suffix 'W' against official documentation to confirm package or tape-and-reel variations. Ensure compatibility with 50 V DC operating conditions and 250 MHz frequency limits. Cross-reference datasheet revisions for any updates regarding RoHS compliance or pinout configurations before integration.
Select this component for high-power RF applications requiring 350 W output at 175 MHz. Consider the common source push-pull topology for efficiency. Verify thermal management requirements due to high power density. Ensure the design supports the 50 V DC supply voltage and operates within the specified frequency range up to 250 MHz.
The STAC2942B belongs to STMicroelectronics' HF/VHF/UHF RF power N-channel MOSFET portfolio. It is part of the active product line utilizing advanced air-cavity packaging. Related devices in the series include the SD2942, which offers lower on-resistance but similar power capabilities for 50 V DC applications up to 250 MHz.
The SD2942 is a related alternative offering 25% lower R DS(ON) and 20% higher power saturation than the standard SD2932. Both devices share similar packaging and application profiles for 50 V DC RF power systems.