STAC3933

Overview

The STAC3933 is an N-channel RF power MOSFET designed for large-signal applications up to 200 MHz. It delivers a minimum output power of 350 W with 29 dB gain at 30 MHz. The device operates on a 100 V DC supply and features excellent thermal stability in a common source configuration. Manufactured using optimized process layouts, it ensures high RF gain, power saturation, and ruggedness. The component complies with the 2002/95/EEC European directive.

Feature Summary

• Excellent thermal stability
• High RF gain and power saturation
• Improved ruggedness and reliability

Applications

• Industrial, Scientific and Medical (ISM) applications
• FM and TV Broadcast
• Mobile and wideband communications
• Avionics and Radar
• Telecom and Satellite Communications

Procurement Notes

Verify the specific package variant against official datasheets, as ST offers multiple options including ceramic and innovative STAC air cavity packages. Confirm RoHS compliance status and ensure the selected part matches the required frequency range and power specifications for the intended design.

Selection Notes

Select this component for high-power RF amplification requiring 350 W output at frequencies up to 200 MHz. Consider the STAC air cavity package for lower thermal resistance and improved performance. Ensure the design supports a 100 V DC supply and accommodates the common source configuration requirements.

Part Context

This transistor belongs to STMicroelectronics' broad portfolio of Radio Frequency power transistors operating from 7 to 100 V. The family utilizes optimized process layouts to enhance RF performance, breakdown voltage, and MTTF, providing cost-effective solutions for demanding communication and broadcast environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components.