Single FETs, MOSFETs STB12NM50T4 product image

STB12NM50T4

$4.68
  • Description:MOSFET N-CH 550V 12A D2PAK
  • Series:MDmesh™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d2bd25f5b462 Category: Brand:

  
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STB12NM50T4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 550V 12A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STB12NM50T4

  • Description:MOSFET N-CH 550V 12A D2PAK
  • Series:MDmesh™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):550 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:350mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):160W (Tc)
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for STB12NM50T4

STB12NM50T4

Single FETs, MOSFETs Overview

The STB12NM50T4 is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics. It utilizes MDmesh technology to achieve low on-resistance and high switching performance. The device features a drain-source voltage rating of 500 V and a continuous drain current of 12 A at 25°C. It has a maximum gate-source voltage of ±20 V and operates within a junction temperature range of -65°C to +150°C. The component is housed in a TO-263 (D2PAK) surface-mount package with three pins, designed for efficient thermal dissipation in high-power applications.

Single FETs, MOSFETs Feature Summary

  • MDmesh technology provides optimized low on-resistance and fast switching characteristics
  • High avalanche energy capability ensures robustness against transient overvoltages
  • Surface-mount TO-263 package facilitates automated assembly and effective heat sinking

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control circuits
  • Power factor correction stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T4' indicates tape-and-reel packaging when sourcing. Confirm the manufacturer is STMicroelectronics and the part number matches exactly. Check RoHS compliance status as per the latest datasheet revision. Ensure the supplier provides original manufacturer documentation to validate authenticity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 500 V blocking voltage and 12 A continuous current handling. The TO-263 package is suitable for applications needing moderate power dissipation with board-level mounting. Consider the thermal resistance characteristics for heatsinking requirements. Verify that the gate drive voltage aligns with the specified limits for optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh family of power MOSFETs from STMicroelectronics. The series is engineered for general-purpose power switching applications. The TO-263 variant offers a compact footprint compared to through-hole options while maintaining similar electrical ratings. It serves as a surface-mount alternative to legacy TO-220 devices in modern PCB layouts.

Single FETs, MOSFETs Replacement Considerations

STP12NM50 is a pin-compatible through-hole alternative with identical electrical specifications. STB12NM50N is a surface-mount version with comparable ratings but may differ in specific thermal or switching parameters.

STB12NM50T4STB12NM50T4
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