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STF9N65M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 5A TO220FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STF9N65M2
- Description：MOSFET N-CH 650V 5A TO220FP
- Series：MDmesh™
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for STF9N65M2
Single FETs, MOSFETs Overview
The STF9N65M2 is an N-channel Power MOSFET developed using STMicroelectronics' MDmesh M2 technology. It features a strip layout and improved vertical structure to achieve low on-resistance and optimized switching characteristics. The device is housed in a TO-220FP through-hole package, offering high-voltage performance suitable for demanding power conversion applications.
Single FETs, MOSFETs Feature Summary
- Developed with MDmesh M2 technology for enhanced efficiency
- Strip layout design reduces on-resistance
- Optimized switching characteristics for high-frequency operation
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Power factor correction circuits
- General-purpose power switching
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant and manufacturing date code against the official datasheet before procurement. Ensure thermal management solutions align with the component's power dissipation ratings under actual operating conditions. Confirm RoHS compliance status if required by your assembly specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a through-hole N-channel MOSFET with 650V breakdown voltage is required. Consider its thermal resistance and current handling capabilities relative to the application's peak load requirements. Compare gate charge specifications against drive circuit limitations to ensure efficient switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M2 family of power MOSFETs from STMicroelectronics. The series focuses on balancing low conduction losses with fast switching speeds. It serves as a robust solution for medium-power applications requiring reliable high-voltage switching in standard through-hole packages.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and electrical parameters such as Vds, Id, and Rds(on) when substituting. Verify that alternative components meet the same thermal and voltage stress requirements for the specific circuit design.
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