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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 20A TO-263
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 10A
- Power - Max：115 W
- Switching Energy：120µJ (on), 270µJ (off)
- Input Type：Standard
- Gate Charge：28 nC
- Td (on/off) @ 25°C：19ns/91ns
- Test Condition：400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr)：96 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The STGB10M65DF2 is a trench gate field-stop IGBT from the M series, rated at 650 V and 10 A in a D2PAK package. It features a typical collector-emitter saturation voltage (VCE(sat)) of 1.55 V at IC = 10 A. The device offers a short-circuit withstand time of 6 µs and supports a maximum junction temperature (TJ) of 175 °C. Key electrical characteristics include a positive VCE(sat) temperature coefficient and tight parameter distribution for safer paralleling.
Feature Summary
- Advanced proprietary trench gate field-stop structure for low-loss performance
- Soft and very fast recovery antiparallel diode
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Low thermal resistance design
Applications
- Inverter systems requiring optimal balance between performance and efficiency
- Applications where low-loss and short-circuit functionality are essential
Procurement Notes
Verify the specific ordering suffix to confirm the exact packaging configuration, such as tube or reel options, as these do not alter the component's electrical function. Confirm the active product status with the manufacturer or authorized distributors before finalizing procurement plans.
Selection Notes
Select this component for designs prioritizing low conduction losses and robust short-circuit capability within the 650 V class. Ensure the thermal management solution accommodates the D2PAK package constraints and that the drive circuitry aligns with the specified gate-emitter voltage limits.
Part Context
This device belongs to STMicroelectronics' M series IGBTs, which utilize trench gate field-stop technology. This series is engineered to provide an optimal balance between inverter system performance and efficiency, specifically targeting applications where low-loss operation and high reliability under fault conditions are critical requirements.
Replacement Considerations
Direct substitutes within the same M series family include STGB20M65DF2 and STGB30M65DF2 for higher current ratings. For different packages, consider STGF10M65DF2 (TO-220FP-3). Verify pinout compatibility and thermal resistance differences when replacing.
