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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 12A D2PAK
- Series：M
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：24 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 6A
- Power - Max：88 W
- Switching Energy：36µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：21.2 nC
- Td (on/off) @ 25°C：15ns/90ns
- Test Condition：400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB6M65DF2 is a single N-channel IGBT from the M series, utilizing a trench gate field-stop structure. It features a collector-emitter voltage of 650 V and a continuous collector current of 12 A at 25 °C. The device has a maximum power dissipation of 88 W and operates within a junction temperature range of -55 °C to +175 °C. Packaged in a DPAK-3 (TO-252-3) for surface mount installation, it includes an integrated antiparallel diode with soft and fast recovery characteristics.
Feature Summary
- Trench gate field-stop technology for low loss and short-circuit withstand capability
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Soft and very fast-recovery integrated antiparallel diode
Applications
- Motor control systems
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC) circuits
- General purpose inverters
Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and tape/reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the component matches the required thermal resistance values for the intended application design.
Selection Notes
Select this component for applications requiring a balance between system performance and efficiency. The tight parameter distribution supports reliable parallel operation. Verify that the 650 V rating and 12 A current capacity meet the circuit requirements while considering the thermal management capabilities of the DPAK-3 package.
Part Context
This part belongs to the M series of IGBTs developed by STMicroelectronics. The series is characterized by an optimal balance between inverter system performance and efficiency. These devices are designed for applications where low-loss operation and robust short-circuit functionality are essential technical requirements.
Replacement Considerations
Cross-reference with other M series parts like STGD6M65DF2 for package differences. Verify pinout compatibility and electrical ratings such as VCEO and IC before substituting. Check for updated revisions in the official documentation to ensure functional equivalence.
