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Product Detailed Parameters
- Description：IGBT 600V 15A 56W D2PAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：21 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 3A
- Power - Max：56 W
- Switching Energy：20µJ (on), 68µJ (off)
- Input Type：Standard
- Gate Charge：13.6 nC
- Td (on/off) @ 25°C：12ns/76ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The STGB6NC60HT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes PowerMESH technology to achieve low on-state voltage drop and high-frequency operation capabilities. The device features an integrated antiparallel diode with ultra-fast recovery characteristics, minimizing cross-conduction susceptibility due to a low CRES/CIES ratio. Designed for surface-mount applications, it operates within a temperature range of -55°C to +150°C and is housed in a DPAK-3 (TO-252-3) package.
Feature Summary
- PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Integrated ultra-fast recovery antiparallel diode reduces reverse recovery charge
- Low CRES/CIES ratio prevents cross-conduction susceptibility
- Optimized for high-frequency operation up to 70 kHz
Applications
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Resonant or soft-switching applications
Procurement Notes
Verify the specific suffix HT4 against official datasheets to confirm tape-and-reel packaging configuration. Ensure compatibility with standard SMD reflow profiles for TO-252 packages. Cross-reference thermal resistance values for PCB layout requirements. Confirm RoHS compliance status through current manufacturer documentation.
Selection Notes
Select this component for designs requiring high-frequency switching above 20 kHz with minimal conduction losses. The integrated diode simplifies circuit topology by eliminating external freewheeling diodes. Consider thermal management strategies given the 63 W power dissipation rating in the specified package.
Part Context
This part belongs to the STGD/STGB/STGF NC60H series of PowerMESH IGBTs. These devices share common technological foundations but differ in current ratings and package types. The STGB variant typically denotes specific current handling capabilities within the 600V family optimized for hard and soft switching environments.
Replacement Considerations
Direct substitutes include STGD6NC60HDT4 and STGP6NC60HD from the same manufacturer family. Verify pinout compatibility and thermal characteristics before substitution. Alternative packages like TO-220 may require adapter solutions if footprint constraints exist.
