STGD3NB60SDT4

Overview

The STGD3NB60SDT4 is a single N-channel PowerMESH™ IGBT in a DPAK (TO-252-3) package. It features a 600 V collector-emitter voltage rating and an integrated ultra-fast recovery antiparallel diode. The device supports a continuous collector current of 3 A at 100°C and up to 6 A at 25°C, with a maximum power dissipation of 48 W. Key electrical parameters include a low saturation voltage of less than 1.5 V at 3 A and a total gate charge of 18 nC. It operates within a junction temperature range of -65°C to 175°C.

Feature Summary

• PowerMESH™ technology optimized for low-frequency applications (<1kHz) to achieve minimum on-voltage drop.
• Integrated ultra-fast recovery antiparallel diode with soft reverse recovery characteristics.
• High input impedance suitable for voltage-driven control circuits.

Applications

• Motor control systems
• Gas discharge lamp ballasts
• Static relay switching

Procurement Notes

Verify the specific ordering suffix T4 corresponds to tape and reel packaging containing 2500 units per reel. Confirm RoHS compliance status through official manufacturer documentation before finalizing procurement orders. Ensure component authenticity by sourcing from authorized distribution channels.

Selection Notes

Select this component for low-frequency switching applications requiring minimal conduction losses. The integrated diode simplifies circuit design by eliminating external freewheeling requirements. Verify thermal management capabilities against the specified junction-to-ambient resistance for the target operating environment.

Part Context

This part belongs to the STGD3NB60SD family of PowerMESH™ IGBTs. The 'S' suffix indicates optimization for low-frequency operation with reduced saturation voltage. The 'T4' suffix specifically denotes tape and reel packaging for automated surface-mount assembly processes.

Replacement Considerations

Direct replacements must match the 600V rating, DPAK footprint, and integrated diode configuration. Verify that alternative components offer comparable saturation voltage and switching loss characteristics to maintain system efficiency.

FAQ

What does the 'S' suffix indicate in the STGD3NB60SD model?

The 'S' suffix identifies the device as part of a family optimized to achieve minimum on-voltage drop for low-frequency applications below 1 kHz.

Does the STGD3NB60SDT4 include an internal diode?

Yes, the device integrates an ultra-fast recovery antiparallel wheeling diode co-packaged with the IGBT.

What is the maximum junction temperature for this component?

The maximum operating junction temperature is 175°C.