STGE50NC60VD

STGE50NC60VD

$16.74
  • Description:IGBT MODULE 600V 90A 260W ISOTOP
  • Series:PowerMESH™

SKU:60b2c02d3aa2 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 90A 260W ISOTOP
  • Series:PowerMESH™
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:-
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 40A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:ISOTOP
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):90 A
  • Power - Max:260 W
  • Current - Collector Cutoff (Max):150 µA
  • Input Capacitance (Cies) @ Vce:4.55 nF @ 25 V

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STGE50NC60VD

Overview

The STGE50NC60VD is a 600 V, 50 A very fast IGBT from STMicroelectronics utilizing the PowerMESH™ technology. It features an ISOTOP package with a co-packaged ultra-fast free-wheeling diode. Key electrical parameters include a collector-emitter voltage of 600 V, continuous collector current of 90 A at 25 °C and 50 A at 100 °C, and saturation voltage of 1.9 V (typical) at 40 A. The device supports junction temperatures up to 150 °C and offers low CRES/CIES ratio for cross-conduction immunity.

Feature Summary

  • High current capability
  • High frequency operation
  • Low CRES/CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery antiparallel diode

Applications

  • High frequency inverters
  • SMPS and PFC in both hard switching and resonant topologies
  • UPS
  • Motor drivers

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm datasheet revision status and packaging specifications prior to procurement. Ensure thermal management design aligns with specified Rthj-case values for reliable operation under load conditions.

Selection Notes

Select this component for applications requiring high-frequency switching and robust current handling. Consider the ISOTOP package for efficient heat dissipation. Evaluate gate resistance requirements against switching energy data to optimize performance within thermal limits.

Part Context

Part of the PowerMESH™ family optimized for high-frequency applications. Designed using advanced strip layout technology for superior trade-off between switching performance and on-state behavior. Suffix 'V' indicates optimization for high-frequency operation.

Replacement Considerations

Check pinout compatibility and thermal characteristics when substituting. Verify that alternative components meet or exceed the 600 V rating and 50 A current capacity. Ensure switching speeds and diode recovery times are compatible with existing circuit designs.

STGE50NC60VDSTGE50NC60VD
$16.74
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